需要具有高量子产率和较低热猝灭的红色荧光粉来提高荧光粉转换的白光发光二极管（pc-WLED）的发光效率和稳定性。我们设计了一种基于 NaGdSiO 4 (NGSO) 的高量子产率荧光粉，增强了5 D 0 → 7 F 1和5 D 0 → 7 F 2跃迁的 Eu 3+发射。该设计基于反转和非反转对称位点的 Eu 3+ 。我们详细研究了 NGSO: Eu 3+的结构、形貌和发光特性荧光粉。使用 394 nm 紫外激发，观察到一系列5 D 0 → 7 F J (0–4) 跃迁的 Eu 3+发射。内量子效率（IQE）为83.42%，红色纯度为91.4%。这些值远高于一些报告的结果。较高的 IQE 和双强5 D 0 → 7 F 1和5 D 0 → 7 F 2发射可能源于NGSO 晶格中Eu 3+离子周围的异常结构无序。最佳荧光粉NGSO寿命：0.5Eu 3+约为2 ms，适用于固态照明。NGSO: 0.5Eu 3+在595和624 nm处的强发射强度在150°C时约为30°C时的85%，显示出其优异的热稳定性。此外，这种红色 NGSO: 0.5Eu 3+荧光粉被封装到暖色 pc-WLED 中，表现出 4222 K 的较低相关色温 (CCT) 和 86.7 的可比较显色指数 (CRI)。这些结果表明，这种红色荧光粉可以作为由 n-UV LED 芯片激发的 pc-WLED 的红色成分。

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Red phosphors with a high quantum yield and a lower thermal quenching are needed to improve the luminescence efficiency and the stability of phosphor-converted white light-emitting diodes (pc-WLEDs). We have designed a high quantum yield NaGdSiO4 (NGSO) based phosphor with enhanced Eu3+ emissions of the 5D0→7F1 and 5D0→7F2 transitions. This design is based on the Eu3+ at both the inversion and non-inversion symmetry sites. In detail, we have studied the structure, morphology, and luminescence properties of NGSO: Eu3+ phosphors. Using a 394 nm UV excitation, a series of Eu3+ emissions of 5D0→7FJ (0–4) transitions has been observed. The internal quantum efficiency (IQE) is 83.42% and the red color purity is 91.4%. These values are much higher than some reported results. The higher IQE and double intense 5D0→7F1 and 5D0→7F2 emissions might originate from an unusual structure disorder around Eu3+ ions in the NGSO lattice. The lifetime of the optimal phosphor NGSO: 0.5Eu3+ is about 2 ms, suitable for solid-state lighting. The intensities of the strong emissions at 595 and 624 nm of NGSO: 0.5Eu3+ at 150 °C is about 85% of that at 30 °C, demonstrating its excellent thermal stability. Furthermore, this red NGSO: 0.5Eu3+ phosphor was packaged into a warm pc-WLED, exhibiting a lower correlated color temperature (CCT) of 4222 K and a comparable color rendering index (CRI) of 86.7. These results show that this red phosphor could act as a red component of pc-WLEDs excited by the n-UV LED chip.