IRFB3306GPBF MOSFET Datasheet pdf |
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IRFB3306GPBF MOSFET Datasheet pdf
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IRFB3306GPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
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PD - 96211IRFB3306GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged 6.1. Size:323K international rectifier irfb3306pbf irfs3306pbf irfsl3306pbf.pdf
IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/ 6.2. Size:327K infineon irfb3306pbf irfs3306pbf irfsl3306pbf.pdf
IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/ 6.3. Size:245K inchange semiconductor irfb3306.pdf
isc N-Channel MOSFET Transistor IRFB3306IIRFB3306FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh efficiency synchronous rectification in SMPSUninterrruptible power supplyHigh speed pow |
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