GENERAL DESCRIPTIONThe HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process. The HX2000 arrays are for 5V designs only. The HX2000r arrays support 5V and 3.3V operation. High density is achieved with the standard 3-layer metal or optional 4-layer metal process, providing up to 290,000 usable gates.

FEATURES• Fabricated on Honeywell’s Radiation Hardened    – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000    – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r• Array Sizes from 40K to 390K Available Gates (Raw)• HX2000 Supports 5V Core Operation• HX2000r Supports 3.3V Core Operation• HX2000r Supports Mixed Voltage I/O Buffers• TTL (5V) or CMOS (5V/3.3V) Compatible I/O• Configurable Multi-Port Gate Array SRAM• Single or Dual Port Custom SRAM Drop-In Capability• Supports Chip Level Power Down for Cold Sparing• Supports System Speeds Beyond 100 MHz• Total Dose Hardness ≥1x106 rad(SiO2)• Dose Rate Upset Hardness:    ≥1x1010 rad(Si)/sec, HX2000*    ≥1x109 rad(Si)/sec, HX2000r*

    Option Available for:    ≥1x1011 rad(Si)/sec, HX2000*    ≥1x1010 rad(Si)/sec, HX2000r*• Dose Rate Survivability ≥1x1012 rad(Si)/sec*• Soft Error Rate    ≤1x10-11 Errors/Bit/Day, HX2000    ≤1x10-10 Errors/Bit/Day, HX2000r• Neutron Fluence Hardness to 1x1014/cm2• No Latchup