2SK3065 MOSFET Datasheet pdf |
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2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because ofundervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.1 ..2. Size:85K rohm 2sk3065.pdf![]()
2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because ofundervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.1 0.1. Size:83K renesas 2sk3065t100.pdf![]()
2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50. 8.1. Size:81K 1 2sk3060.pdf![]()
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3060SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3060 TO-220AB2SK3060-S TO-262FEATURES Low on-state resistance2SK3060-ZJ TO-263RDS(on)1 = 13 m MAX. (VGS = 10 V, ID 8.2. Size:141K toshiba 2sk3067.pdf![]()
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2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3068 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.4 (typ.) High forward transfer admittance : |Yfs| = 9.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 8.4. Size:87K renesas 2sk3069.pdf![]()
2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062-1100 (Previous: ADE-208-694I) Rev.11.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. Gate2. Drain(Flange)G3. Source 8.5. Size:101K renesas rej03g1062 2sk3069ds.pdf![]()
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. 8.6. Size:100K panasonic 2sk3064.pdf![]()
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3064Silicon N-channel MOSFETUnit: mmFor switching circuit0.15+0.100.3+0.10.050.0For rechargeable buttery pack (Li+ ion buttery, etc.)3 Features High gate-source voltage (Drain open) VGSO1 2 Low gate threshold voltage Vth(0.65) (0.65)1.30.12.00.2 8.7. Size:289K inchange semiconductor 2sk3069.pdf![]()
isc N-Channel MOSFET Transistor 2SK3069FEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid 8.8. Size:357K inchange semiconductor 2sk3060-z.pdf![]()
isc N-Channel MOSFET Transistor 2SK3060-ZFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi 8.9. Size:283K inchange semiconductor 2sk3068k.pdf![]()
isc N-Channel MOSFET Transistor 2SK3068KFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno 8.10. Size:357K inchange semiconductor 2sk3060-zj.pdf![]()
isc N-Channel MOSFET Transistor 2SK3060-ZJFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno 8.11. Size:283K inchange semiconductor 2sk3060-s.pdf![]()
isc N-Channel MOSFET Transistor 2SK3060-SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi 8.12. Size:279K inchange semiconductor 2sk3067.pdf![]()
isc N-Channel MOSFET Transistor 2SK3067FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr 8.13. Size:357K inchange semiconductor 2sk3068b.pdf![]()
isc N-Channel MOSFET Transistor 2SK3068BFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno 8.14. Size:289K inchange semiconductor 2sk3060.pdf![]()
isc N-Channel MOSFET Transistor 2SK3060FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d |
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