J. Meng, T. Wang, H. Zhu, L. Ji, W. Bao, P. Zhou, L. Chen（陈琳）, Q.-Q. Sun, and D. W. Zhang, “Integrated In-Sensor Computing Optoelectronic Device for Environment-Adaptable Artificial Retina Perception Application,” Nano Letters, 2021. C. Wang, H. Liu, L. Chen（陈琳）, H. Zhu, L. Ji, Q.-Q. Sun, and D. W. Zhang, “Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS2 Thin Film for Neuromorphic Application,” Ieee Electron Device Letters, vol. 42, no. 10, pp. 1555-1558, Oct, 2021. Y. Liu, Y. Cao, H. Zhu, L. Ji, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “HfZrOx-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering,” Ieee Electron Device Letters, vol. 42, no. 9, pp. 1311-1314, Sep, 2021. Z.-Y. He, T.-Y. Wang, J.-L. Meng, H. Zhu, L. Ji, Q.-Q. Sun, L. Chen（陈琳）, and D. W. Zhang, “CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications,” Materials Horizons, vol. 8, no. 12, pp. 3345-3355, Nov 29, 2021. T.-Y. Wang, J.-L. Meng, Q.-X. Li, Z.-Y. He, H. Zhu, L. Ji, Q.-Q. Sun, L. Chen（陈琳）, and D. W. Zhang, “Reconfigurable optoelectronic memristor for in-sensor computing applications,” Nano Energy, vol. 89, Nov, 2021. J. L. Meng, T. Y. Wang, Z. Y. He, L. Chen（陈琳）, H. Zhu, L. Ji, Q. Q. Sun, S. J. Ding, W. Z. Bao, P. Zhou, and D. W. Zhang, “Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications,” Materials Horizons, vol. 8, no. 2, pp. 538-546, Feb, 2021. J. L. Meng, T. Y. Wang, L. Chen（陈琳）, Q. Q. Sun, H. Zhu, L. Ji, S. J. Ding, W. Z. Bao, P. Zhou, and D. W. Zhang, “Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application,” Nano Energy, vol. 83, May, 2021. X. Xu, X. Zhou, T. Wang, X. Shi, Y. Liu, Y. Zuo, L. Xu, M. Wang, X. Hu, X. Yang, J. Chen, X. Yang, L. Chen（陈琳）, P. Chen, and H. Peng, “Robust DNA-Bridged Memristor for Textile Chips,” Angewandte Chemie-International Edition, vol. 59, no. 31, pp. 12762-12768, Jul 27, 2020. Y. Wang, Y. Yang, Z. He, H. Zhu, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “Laterally Coupled 2D MoS2 Synaptic Transistor With Ion Gating,” Ieee Electron Device Letters, vol. 41, no. 9, pp. 1424-1427, Sept, 2020. T.-Y. Wang, J.-L. Meng, M.-Y. Rao, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, W.-Z. Bao, P. Zhou, and D. W. Zhang, “Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application,” Nano Letters, vol. 20, no. 6, pp. 4111-4120, Jun 10, 2020. T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning,” Nanoscale, vol. 12, no. 16, pp. 9116-9123, Apr 28, 2020. T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation,” Advanced Science, vol. 7, no. 8, Apr, 2020. H. Liu, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit,” Nano Research, vol. 13, no. 6, pp. 1644-1650, Jun, 2020. Q. X. Li, T. Y. Wang, X. L. Wang, L. Chen（陈琳）, H. Zhu, X. H. Wu, Q. Q. Sun, and D. W. Zhang, “Flexible organic field-effect transistor arrays for wearable neuromorphic device applications,” Nanoscale, vol. 12, no. 45, pp. 23150-23158, Dec, 2020. Z. H. Gu, T. B. Zhang, J. L. Luo, Y. Wang, H. Liu, L. Chen（陈琳）, X. K. Liu, W. J. Yu, H. Zhu, Q. Q. Sun, and D. W. Zhang, “MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors through Strain Engineering,” Acs Applied Materials & Interfaces, vol. 12, no. 49, pp. 54972-54979, Dec, 2020. M. Zhang, H. Li, J. Xu, H. Zhu, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications,” Ieee Electron Device Letters, vol. 40, no. 1, pp. 123-126, Jan, 2019. T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments,” Nanoscale Horizons, vol. 4, no. 6, pp. 1293-1301, Nov 1, 2019. L.-J. Yu, T.-Y. Wang, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Stateful Logic Operations Implemented With Graphite Resistive Switching Memory,” Ieee Electron Device Letters, vol. 39, no. 4, pp. 607-609, Apr, 2018. T.-Y. Wang, Z.-Y. He, H. Liu, L. Chen（陈琳）,H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States,” Acs Applied Materials & Interfaces, vol. 10, no. 43, pp. 37345-37352, Oct 31, 2018. S. Y. Jiang, Y. Yuan, X. Wang, L. Chen（陈琳）, H. Zhu, Q. Q. Sun, and D. W. Zhang, “A Semi-Floating Gate Transistor With Enhanced Embedded Tunneling Field-Effect Transistor,” Ieee Electron Device Letters, vol. 39, no. 10, pp. 1497-1499, Oct, 2018.