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激光与光电子学进展, 2021, 58 (21): 2114001, 网络出版: 2021-11-17 一种脉宽可调的窄脉冲激光器驱动电路设计 下载： 1229次Design of a Narrow Pulse Laser Drive Circuit with Adjustable Pulse WidthGet PDFFull Text图表MetricsMore 张瑞峰 *崔佳敏
作者单位 天津大学微电子学院，天津 300072
激光器 半导体激光器 脉冲宽度调制 驱动电源 高速金属氧化物半导体场效应晶体管 lasers semiconductor laser pulse width modulation drive power high-speed metal oxide semiconductor field effect transistor AI词云图 AI语音精读 AI语音超短摘要【AI生成本文一句话精读】：【AI生成本文短摘要】：注：本部分内容由 AI 自动生成，仅供您参考。对于您使用本站 AI 自动生成内容所产生的一切后果，本网站及平台运营方概不承担任何商业和法律责任，请您知悉。 摘要针对半导体激光器中纳秒级脉宽的驱动电路脉冲宽度范围小、无法调节的问题，提出一种脉宽可调的窄脉冲激光器驱动电路设计方案。根据现场可编程逻辑门阵列（FPGA）技术和半导体激光的工作原理，搭建了半导体激光驱动电路的一般模型，并进行了仿真与实验分析。以FPGA开发板为控制核心，使用高速金属氧化物半导体场效应晶体管（MOSFET）驱动芯片DE375作为开关，实现驱动电源及半导体激光器的精密控制。该电路输出的脉冲电流幅值可达40 A，脉冲宽度为5~200 ns，重复频率为0~50 kHz，上升沿宽度小于5 ns，有效增强了半导体激光器驱动电路的功能。 AbstractAiming at the problem that the pulse width range of the driving circuit with nanosecond pulse width in semiconductor lasers is small and cannot be adjusted, a design scheme of a narrow pulse laser driving circuit with adjustable pulse width is proposed. According to the field programmable logic gate array (FPGA) technology and the working principle of the semiconductor laser, a general model of the semiconductor laser drive circuit is built, and simulation and experimental analysis are performed. Taking FPGA development board as the control core, using high-speed metal oxide semiconductor field effect transistor (MOSFET) drive chip DE375 as a switch to achieve precise control of the drive power and semiconductor laser. The output pulse current amplitude of the circuit can reach 40 A, pulse width is 5-200 ns, repetition frequency is 0-50 kHz, and rising edge width is less than 5 ns, which effectively improves the function of the semiconductor laser drive circuit. PDF全文 张瑞峰, 崔佳敏. 一种脉宽可调的窄脉冲激光器驱动电路设计[J]. 激光与光电子学进展, 2021, 58(21): 2114001. Ruifeng Zhang, Jiamin Cui. Design of a Narrow Pulse Laser Drive Circuit with Adjustable Pulse Width[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2114001.
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