图 23  Ga2O3/NSTO异质结自供电探测器的结构示意图(a)[142] 、黑暗及254 nm不同光强下的I–V曲线(b)[142]和异质结界面处光生载流子输运的能带结构示意图(c)[142]; Ga2O3/P-Si PN结探测器的结构示意图(d)[143]; Ga2O3/Ga:ZnO异质结探测器的整流特性及结构示意图(e)[145]和光谱响应(f)[145]; Ga2O3/GaN PN结探测器的结构示意图(g)[146]和黑暗及不同波长光照下的I–V曲线(h)[146]; Sn:Ga2O3/GaN PN结探测器的光谱响应(i)[144]和不同波长光照下的I–t曲线(j)[147]; Ga2O3/SiC/P-Si PIN结(k)[148]和石墨烯/Ga2O3/SiC探测器的结构示意图(l)[149]

Fig. 23.  Schematic diagram (a) [142], I-V cures in dark and under 254 nm with different light intensity illumination (b) [142], and schematic energy band diagrams (c) [142] of the β-Ga2O3/NSTO heterojunction self-powered photodetector; Schematic diagram of Ga2O3/P-Si PN junction detector (d) [143]; Rectifier features (e), schematic diagram (e) and spectral response (f) of the Ga2O3/Ga:ZnO heterojunction photodetector[145]; Schematic diagram (g) [145], I-V cures in dark and under the different wavelength light illumination (h) [146]; Spectral response (i) and I-t cures under the different wavelength light illumination (j) of the Sn:Ga2O3/GaN PN junction photodetector[145]; Schematic diagram of Ga2O3/SiC/P-Si PIN junction photodetector (k) [148]and graphene/Ga2O3/SiC photodetector (l)[149]